Power Density Optimization in Gallium Nitride (GaN)-Based Power Amplifiers for Radar and Satellite Communication Applications

Arash Azizpor¹ Pourya Ahmadi Amirabadi² Arta Pashaeizad³ Shayan Razeh⁴

1) Department of Electrical Engineering, National Skills University No. 2, Kermanshah,Iran ،Email:
2) Department of Electrical Engineering, Razi University,Kermanshah,Iran, Email:
3) Department of Electrical Engineering, Imam Khomeini International University, Qazvin,Iran, Email:
4) Department of Electrical Engineering, Ayatollah Boroujerdi University, Lorestan,Iran, Email:

IOI Code : ABGZ-ABKGDF
Publication : The third international conference on new approaches in engineering and basic sciences(icnabs.ir)
Abstract :
    This paper directly reviews methods for optimizing power density in GaN-based power amplifiers for radar and satellite communications. Material and HEMT properties, electric-field engineering, gate scaling, SiC and diamond substrates, thermal management, matching networks, Doherty operation, linearity, and reliability are examined. The distinct requirements of pulsed radar and continuous or modulated satellite links are compared. The analysis shows that power density must be optimized together with PAE , junction temperature, bandwidth, linearity, and service life; maximizing W/mm alone is not a sufficient design objective.

Keywords : gan hemt multi objective optimization mission effective power density radar satellite communications mmic electro thermal co design gan on sic gan on diamond