Quantum Materials for Next Generation Spintronic Devices: A Short Review

mohsen Rezaeian¹

1) graduated in nanomaterial Msc, Guilan university,

IOI Code : ACCD-ACZCFH
Publication : 10th International Conference on Applied Researches in Science & Engineering (carseconf.com)
Abstract :
    This short narrative review examines how quantum materials can advance next-generation spintronic devices by exploiting the electron spin alongside charge for information generation, transport, manipulation, and detection. It first outlines the governing mechanisms of spintronics, including spin polarization, spin transport and relaxation, spin–orbit coupling, spin-dependent scattering, and quantum tunnelling. The review then surveys key material classes: topological insulators with spin-momentum-locked boundary states; ferromagnetic, antiferromagnetic, ferrimagnetic, and two-dimensional magnetic materials; highly tunable Heusler alloys with potential half-metallicity; SOC-driven materials that support spin Hall and Rashba–Edelstein conversion; and graphene-based van der Waals heterostructures combining long-range spin transport with proximity-engineered spin functionality. These material attributes are related to major device concepts, including spin valves, MgO-based magnetic tunnel junctions, spin field-effect transistors, spin Hall devices, and skyrmion-based memory architectures. The review emphasizes that the practical value of quantum materials depends not only on intrinsic electronic or magnetic properties but also on interface quality, spin transparency, chemical and thermal stability, switching energy, device variability, and CMOS-compatible fabrication. Overall, quantum materials provide a versatile foundation for non-volatile memory, energy-aware spin logic, sensing, and prospective quantum-spin technologies, provided that scalable integration and reproducible room-temperature performance can be achieved.

Keywords : nanomaterials optoelectronics quantum dots metasurfaces photodetectors photonics