Simulation, and realization of 3.5 Watts X-band PA using discrete transistor

Mehdi Forouzanfar¹

1) Assistant Professor of Electronics Department, Birjand University

IOI Code : XCCC-GAZFZ
Publication : 10th International Conference on Innovative Technologies in Science, Engineering and Technology(tetsconf.com)
Abstract :
    In this paper, the steps of simulation and fabrication of a power amplifier in the frequency range of 8.8-9.2 GHz by discrete GaN HEMT transistors are reported. Three-dimensional simulations were performed in HFSS and Momentum ADS software to characterize the required wire bond and matching circuits and optimize the designed circuits. The fabricated amplifier provides an outpower of 3.5 watts and a power gain of 13 dB.

Keywords : gan hemt discrete transistors matching circuit output power x band