A Novel Design and Simulation of InGaP/GaAs ARC Solar Cell with 43.6% efficiency under AM1.5G Standard Spectrum
A Novel Design and Simulation of InGaP/GaAs ARC Solar Cell with 43.6% efficiency under AM1.5G Standard Spectrum
Rajeh harbi1 saeed khosroabadi2
1) Department of Electrical Engineering,Imam Reza International University,Mashhad, Iran.
2) Department of Electrical Engineering,Imam Reza International University,Mashhad, Iran.
Publication :
2nd International Conference on New Research & Achievements in Science, Engineering & Technologies(setbconf.com/2nd)
Abstract :
In this paper, an InGaP/GaAs double-junction solar cell based on the back-surface field (BSF) layer is selected, and adding an intrinsic material to the tunnel junction is proposed. Effective BSF is an important element for efficiency in a double-junction solar cell structure. Important parameters of open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF) and efficiency (η) in the proposed solar cell model are calculated VOC=2.7V, JSC=1894.6mA/cm2, FF=87.5% and η=43,6%, respectively. The simulations are obtained at solar intensities (1,000 suns) under the AM1.5G standard spectrum.
Keywords :
Solar Cells
Back-Surface Field (BSF)
Anti-Reflection Coating (ARC)