Deceleration of particles in Graphene transistors with impurity states of electrons

Sareh Ahmadpour¹ Babak Haghighi²

1) Dept. of Physics, Faculty of Science, Islamic Azad University, Mashhad Branch, Mashhad,Iran
2) Dept. of Physics, Faculty of Science, Islamic Azad University, Mashhad Branch, Mashhad,Iran

Publication : 4th International Conference On Research Science And Technology(4rstconf.com)
Abstract :
Differential cross-section of inelastic scattering and loss function of fast charged particles in a two- dimensional electron gas are calculated at low temperatures, taking into account the localization of electrons at impurity atoms. Hie contribution of one-particle and collective excitations of the electron gas to the scattering cross-section and loss function is considered. One- particle excitations are manifested in the existence of a threshold of scattering cross-section and loss function, associated with a transition of localized electrons to the conduction band. Localization of electrons leads to a decrease in the frequency of two-dimensional plasmons. Consequently, the plasma loss lines in the energy spectrum of electrons passing through a two- dimensional electron gas are displaced towards lower frequencies and are broadened. Numerical estimates are obtained for Graphene transistors at the boundary between silicon and silicon dioxide.
Keywords : Differential cross-section ، two- dimensional electron gas ،low temperatures Graphene transistors .