Improved channel short-circuit effects in new-generation transistors with nanometer dimensions

Yasser Salehi¹ Maryam Heydari Haratmeh² Mohammad Hadi Keshavarzi³

1) Shiraz Instructor, Shiraz University of Medical Sciences,
2) Shiraz Instructor, Shiraz University of Medical Sciences,
3) Student of Islamic Azad University, Fasa Branch,

Publication : 2nd International Congress On Engineering, Technology and Innovation(eticong.com/2nd)
Abstract :
Integrated circuits have been transformed from low-speed, low-complexity structures to high-speed, complex systems containing numerous electronic circuits. Increased short-channel effects appear to be a major obstacle to maintaining the performance of conventional MOSFET blockchain SI (MOSFET) conventional nano-technology nodes. The incorporation of new technologies is turning the depth of submicron CMOS devices. Among the various possible solutions, the unconventional MOSFET device structure is utilized by applying gate material engineering which improves the gate transfer efficiency by modifying the electric field pattern and changing the surface area along the channel. In this study, we investigate the field and potential variations in two-gate transistors. In addition, in this study we design and simulate a cylindrical and rectangular GAA transistor. We first design and simulate a cylindrical GAA transistor and examine its features including voltage-current diagram, sub-threshold slope, on / off current, and threshold voltage. And then, by simulating these effects on a rectangular GAA transistor, we compare the results with each other.
Keywords : Two-gate transistor dual-gate transistor on and off current potential variations.