Numerical Simulation efficiency of photovoltaic effect in Si layers by use of AMPS-1D

Ashrafalsadat.Mirkamali¹ Kh.Kh.Muminov²

1) Department of Science and Engineering, Behshahr Branch, Islamic Azad University, Behshahr, Iran
2) Physical-Technical Institute named after S.U.umarov, academy of Sciences of the Republic of Tajikistan, Dushanbe, Tajikistan.

IOI Code : XYFZ-BBZBF
Publication : International Conference on Engineering Sciences and Technology(icoesat.com)
Abstract :
    In this paper we conduct the analysis of parameters and the efficiency of photovoltaic effect in Si layers depending on it thickness and temperature variations by use of AMPS-1D software. The simulation of the efficiency is carried out in order to optimize the performance of n-type and p-type conductivity of the Si layers. The results are in a good agreement with the experimental data obtained from the literature. In this paper we show, that maximal fill factor for the n-type Si layers is derived at the optimum temperature of 200 K and optimum of thickness is 1000 nm. In case of p-type Si layers the fill factor is stable up to 300 K and then decreases. At the same time the thickness of the sample does not contribute sufficiently to the fill factor.

Keywords : amps 1d efficiency fill factor thickness si layer