Design of a High-Speed, Low-Noise Operational Amplifier Using FinFET Technology for Next-Generation Telecommunication Systems

Yasaman Mosaferchi¹ Arash Azizpor² Fatemeh Yazdi³ Pourya Ahmadi Amirabadi⁴

Abstract :
This paper presents a comprehensive architecture for a wideband, ultra-low-noise operational amplifier (Op-Amp) implemented in advanced 7nm FinFET technology. As wireless communication standards evolve toward 5G-Advanced and 6G, analog interfaces require operational amplifiers featuring multi-gigahertz bandwidth, ultra-low equivalent input noise density, and high dynamic range, all while operating under severely constrained supply voltages. To address the low intrinsic transistor gain and the significant flicker and thermal noise associated with nanoscale FinFET dimensions, a hybrid topology—combining Multi-Feedforward Controlled Miller Compensation (MFMC) with optimized PMOS differential sizing—is introduced. Theoretical formulations for noise spectral densities and small-signal transfer functions have been rigorously derived. Extensive simulations in the HSPICE environment, utilizing BSIM-CMG predictive models in 7nm technology, validate this theoretical framework. Operating from a 0.8V supply and consuming 3.1 mW of power, the proposed operational amplifier (Op-Amp) achieves an open-loop DC voltage gain of 68.4 dB, a unity-gain bandwidth (UGB) of 4.2 GHz with a phase margin of 64.5 degrees, and a specific input-referred noise density at 100 MHz.

Keywords : operational amplifier (op amp) 7nm finfet technology low noise amplifiers (lnas) feedforward compensation 5g/6g communication systems

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زبان مقاله : انگلیسی
محور مقاله : مهندسی برق
محل انتشار : سومین کنفرانس بین المللی رویکردهای نوین در مهندسی و علوم پایه
آدرس وب سایت کنفرانس : icnabs.ir
کد IOI مقاله : ABGZ-ABKGFD
لینک مستقیم مقاله : https://isnac.ir/ABGZ-ABKGFD
نمایش چکیده فارسی : https://isnac.ir/SA/ABGZ-ABKGFD

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