Design and Analysis of High-Power Device Based on PZT/AlGaN/GaN by Ferroelectric-Gate Heterojunction

Mojtaba Hosseinzadeh Sani¹ Ali Akbar Shakeri²

Abstract :
Until now ferroelectric material has been used in many transistors such as TFET and MOSFET, but ferroelectric material in the transistor HEMT can provide better performance in memory usage. The proposed structure of the HEMT transistor has its own polarization effects, if the ferroelectric material is used in this transistor, the polarization properties of the transistor and ferroelectric material will be aggregated, and more memory is gained than other structures. This study is to simulate AlGaN/GaN HEMT and ferroelectric-gate HFET. By using the ferroelectric core, the amount of power and memory in the transistor is increased. The memory performance can be saved even after the power is turned off and the readout properties are not destructive for ferroelectric gate heterojunction HEMT transistors. Lead Zirconium Titan ate (PZT) is chosen as the ferroelectric material. The value Ion = 10-1, Ioff=10-14, and memory Windows (MW=2V) for memory applications and an 8 % increase power and the threshold voltage is reduced to -0.3V in the proposed transistor.

Keywords : ferroelectric gate pzt/algan/gan high power memory windows

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زبان مقاله : انگلیسی
محور مقاله : علوم مهندسی
محل انتشار : سومین کنگره بین المللی علوم، مهندسی و تکنولوژی - هامبورگ
آدرس وب سایت کنفرانس : germanconf.com
کد IOI مقاله : XCZE-EDCDA
لینک مستقیم مقاله : https://isnac.ir/XCZE-EDCDA
نمایش چکیده فارسی : https://isnac.ir/SA/XCZE-EDCDA

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